Silicon Frontline Adds New Capabilities; Focuses on Semiconductor Power Device Reliability and Efficiency, Accurate 3D Parasitic Extraction, Point-to-Point Resistance

CAMPBELL, CA — (Marketwire) — 05/24/12 — , Inc. (SFT) an Electronic Design Automation (EDA) company, in the 3D parasitic extraction and analysis software market, announced new versions of its flagship products, (Fast 3D) for fast 3D extraction and (Resistive 3D) for 3D extraction and analysis of large resistive structures, and a new product (Pont-to-Point) for IR drop analysis.

F3D: Increased speed & capacity
F3D is chosen for its nanometer and A/MS design verification accuracy. To address the growing complexity of today-s nanometer designs, F3D is now faster and handles larger designs. A new segment mode provides better performance improvement as circuit size increases. F3D has improved handling of active and passive devices in addition to support of co-planar structures. These capabilities provide support for newer and more complex geometries.

F3D benefits include:

Better performance for larger designs

Analysis of larger (unlimited) size designs

Improved handling of active and passive devices for new technology nodes

R3D: Layer-by-layer comparisons, transient-gate analysis
R3D is used for analysis that improves the reliability and efficiency of semiconductor power devices. R3D has been adopted by over 20 customers and applied to MOS, DMOS, LDMOS, vertical DMOS, waffle-style and GaN HEMT designs.

The new version of R3D allows for easy comparison of design enhancements both graphically and with a new layer-by-layer resistance report. If design changes are made, the analysis includes the impact on RDson and current density.

A new option supports transient analysis of gate networks, which allows for switching optimization. As power devices become larger, managing gate switching is critical to ensure correct operation. R3D Gate extracts and analyzes the gate network providing graphical and textual results. Issues are quickly identified and resolved ensuring proper operation of the device is achieved.

Point-to-Point Resistance Analysis
Silicon Frontline is delivering its new P2P product for point-to-point or multipoint to multipoint resistance analysis and fast, static IR drop analysis.

Monday-Wednesday, June 4-6, 2012 9 am to 6 pm
Booth #2900
Moscone Convention Center, San Francisco, California
To make an appointment, please email .

, Inc. provides post-layout verification software that is Guaranteed Accurate and works with existing design flows from major EDA vendors. Using new 3D technology, the company-s software products improve silicon quality for standard and advanced nanometer processes. For more information please visit . For sales or general assistance, please email .

Notes to editors:
Acronyms and Definitions
A/MS: Analog Mixed Signal
DMOS: Double-diffused Metal Oxide Semiconductor
EDA: Electronic Design Automation
F3D: Fast 3D
GaN: Gallium Nitride
HEMT: High Electron Mobility Transistor
IR Drop Voltage Drop Analysis
LDMOS: Laterally Diffused Metal Oxide Semiconductor
MOS: Metal Oxide Semiconductor
R3D: Resistive 3D
Rdson: Resistance from drain to source

All trademarks and tradenames are the property of their respective holders.

Press Contact:
Georgia Marszalek
ValleyPR LLC
+1 650 345 7477

Leave a Comment